Invention Grant
- Patent Title: Power decoupling attachment
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Application No.: US15796121Application Date: 2017-10-27
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Publication No.: US11297717B2Publication Date: 2022-04-05
- Inventor: Lei Shan
- Applicant: ELPIS TECHNOLOGIES INC.
- Applicant Address: CA Ottawa
- Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee Address: CA Ottawa
- Agency: VanTek IP LLP
- Agent Shin Hung
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H05K3/30 ; H05K3/40 ; H05K3/36 ; H05K1/09 ; H05K1/14 ; H01L23/00 ; H05K1/03 ; H05K1/11 ; H05K3/00 ; H05K1/02

Abstract:
An embodiment of the invention may include a method, and resulting structure, of forming a semiconductor structure. The method may include forming a component hole from a first surface to a second surface of a base layer. The method may include placing an electrical component in the component hole. The electrical component has a conductive structure on both ends of the electrical component. The electrical component is substantially parallel to the first surface. The method may include forming a laminate layer on the first surface of the base layer, the second surface of the base layer, and between the base layer and the electrical component. The method may include creating a pair of via holes, where the pair of holes align with the conductive structures on both ends of the electrical component. The method may include forming a conductive via in the pair of via holes.
Public/Granted literature
- US20180054895A1 POWER DECOUPLING ATTACHMENT Public/Granted day:2018-02-22
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