Invention Grant
- Patent Title: Photoresist developer and method of developing photoresist
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Application No.: US15938599Application Date: 2018-03-28
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Publication No.: US11300878B2Publication Date: 2022-04-12
- Inventor: An-Ren Zi , Chin-Hsiang Lin , Ching-Yu Chang , Joy Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/32
- IPC: G03F7/32 ; G03F7/004 ; H01L21/47 ; H01L21/027 ; G03F7/038
Abstract:
A photoresist developer includes a solvent having Hansen solubility parameters of 15 pKa>9.5; and a chelate.
Public/Granted literature
- US20190146337A1 PHOTORESIST DEVELOPER AND METHOD OF DEVELOPING PHOTORESIST Public/Granted day:2019-05-16
Information query
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