- Patent Title: EUV phase-shift SRAF masks by means of embedded phase shift layers
-
Application No.: US16045253Application Date: 2018-07-25
-
Publication No.: US11300885B2Publication Date: 2022-04-12
- Inventor: Robert Bristol , Guojing Zhang , Tristan Tronic , John Magana , Chang Ju Choi , Arvind Sundaramurthy , Richard Schenker
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/24

Abstract:
Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
Public/Granted literature
- US20200033736A1 EUV PHASE-SHIFT SRAF MASKS BY MEANS OF EMBEDDED PHASE SHIFT LAYERS Public/Granted day:2020-01-30
Information query
IPC分类: