Invention Grant
- Patent Title: Flash memory system
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Application No.: US17080123Application Date: 2020-10-26
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Publication No.: US11302401B2Publication Date: 2022-04-12
- Inventor: Norikazu Okako , Yugi Ito
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2019-210155 20191121
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/30 ; G11C16/10 ; G11C7/10 ; G11C16/26

Abstract:
A flash memory system includes a memory controller, flash memory, power supply circuit, and control circuit. The power supply circuit includes a power supply terminal fed with external power, a step-up circuit for boosting a first voltage associated with the external power and thereby generating a second voltage higher than the first voltage, a capacitor charged at the second voltage, and a first step-down circuit for lowering the second voltage and thereby generating a third voltage lower than the second voltage, and supplying the generated third voltage to the flash memory as the operating voltage. The control circuit includes a circuit for controlling the active or inactive state of the flash memory based on the level of the third voltage, and a circuit for controlling the active or inactive state of the memory controller based on both the levels of the voltage of the external power and the third voltage.
Public/Granted literature
- US20210158878A1 FLASH MEMORY SYSTEM Public/Granted day:2021-05-27
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