Invention Grant
- Patent Title: Memory proximity disturb management
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Application No.: US17202205Application Date: 2021-03-15
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Publication No.: US11302407B2Publication Date: 2022-04-12
- Inventor: Jeffrey L. McVay , Samuel E. Bradshaw , Justin Eno
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Nicholson De Vos Webster & Elliott LLP
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C29/52 ; G11C16/10 ; G11C16/30 ; G11C16/26 ; G11C16/04

Abstract:
Exemplary methods, apparatuses, and systems include a controller to manage memory proximity disturb. The controller identifies a first memory location in response to an access of a second memory location, the first memory location storing a first value. The controller updates a first disturb value by a first amount, the first disturb value representing a cumulative disturb effect on the first value in the first memory location by accesses to a first plurality of memory locations proximate to the first memory location, the first plurality of memory locations including the second memory location.
Public/Granted literature
- US20210202021A1 MEMORY PROXIMITY DISTURB MANAGEMENT Public/Granted day:2021-07-01
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