Methods, systems, and devices related to zone swapping for wear leveling memory are described. A memory device can perform access operations by mapping respective logical zones associated with respective logical addresses (e.g., of an access command) to respective zones of the memory device. As the memory device receives access commands and accesses respective zones, some zones may undergo a disproportionate amount of access operations relative to other zones. Accordingly, the memory device may swap data stored in some disproportionately accessed zones. The memory device can update a correspondence of respective logical zones associated with the zones based on swapping the data so that later access operations access the desired data.