Invention Grant
- Patent Title: Row address comparator for a row redundancy control circuit in a memory
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Application No.: US16711929Application Date: 2019-12-12
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Publication No.: US11302415B2Publication Date: 2022-04-12
- Inventor: Venkatraghavan Bringivijayaraghavan , Sreejith Chidambaran , Prasad Vernekar
- Applicant: Marvell Asia Pte, Ltd.
- Applicant Address: SG Singapore
- Assignee: Marvell Asia Pte, Ltd.
- Current Assignee: Marvell Asia Pte, Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: G11C29/38
- IPC: G11C29/38 ; G11C11/412 ; G11C29/00 ; G11C29/44 ; G11C11/418 ; G11C8/10 ; G11C8/18

Abstract:
Disclosed is a row address comparator with voltage level shifting and latching functionality and including: an evaluation section for comparing two row addresses in a first voltage domain and outputting an initial match signal in a second voltage domain; and a latch section for outputting a latched final match signal based on the initial match signal. The comparator employs a first clock signal (CLK1), a second clock signal (CLK2) that is different from CLK1 and a third clock signal (CLK3) that is inverted with respect to CLK2. CLKs 1 and 2 control pre-charge and evaluation operations within the evaluation section with CLK2 being set to minimize hold time. CLKs 2 and 3 control the latch operation within the latch section. Feedback loops in both sections enhance performance. Also disclosed are a control circuit that incorporates the comparator and a method for implementing row redundancy in a memory.
Public/Granted literature
- US20210183460A1 ROW ADDRESS COMPARATOR FOR A ROW REDUNDANCY CONTROL CIRCUIT IN A MEMORY Public/Granted day:2021-06-17
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