Invention Grant
- Patent Title: Semiconductor device manufacturing method
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Application No.: US16931678Application Date: 2020-07-17
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Publication No.: US11302538B2Publication Date: 2022-04-12
- Inventor: Yosuke Nakata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-193952 20191025
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/56 ; H01L21/3105 ; H01L21/304 ; H01L21/683 ; H01L21/78
Abstract:
A semiconductor device manufacturing method includes processes of: applying a protective film precursor solution over an end of each of a plurality of semiconductor element structures and a side surface and a bottom surface of a groove; roughly drying a solvent in the protective film precursor solution to form a protective film; and performing full-curing to evaporate a solvent in the protective film after a process of cutting between the plurality of semiconductor element structures or a process of peeling a plurality of semiconductor elements from a dicing tape.
Public/Granted literature
- US20210125838A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2021-04-29
Information query
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