• Patent Title: Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layer
  • Application No.: US16309014
    Application Date: 2017-07-03
  • Publication No.: US11302565B2
    Publication Date: 2022-04-12
  • Inventor: Patrick MoosHannes Hecht
  • Applicant: SILTRONIC AG
  • Applicant Address: DE Munich
  • Assignee: SILTRONIC AG
  • Current Assignee: SILTRONIC AG
  • Current Assignee Address: DE Munich
  • Agency: Brooks Kushman P.C.
  • Priority: DE102016212780.2 20160713
  • International Application: PCT/EP2017/066437 WO 20170703
  • International Announcement: WO2018/010986 WO 20180118
  • Main IPC: H01L21/687
  • IPC: H01L21/687 C30B25/12 C30B29/06
Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layer
Abstract:
A device for handling a semiconductor wafer in an epitaxy reactor has a susceptor; longitudinal holes extending through the susceptor; a wafer lifting shaft; wafer lifting pins guided through the longitudinal holes; a susceptor carrying shaft; susceptor carrying arms; susceptor support pins; guide sleeves anchored in the susceptor carrying arms; and guide elements protruding from the guide sleeves which, at upper ends, have bores into which wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by the wafer lifting shaft.
Information query
Patent Agency Ranking
0/0