Invention Grant
- Patent Title: Semiconductor device, and power conversion device including the semiconductor device
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Application No.: US16617233Application Date: 2017-09-21
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Publication No.: US11302597B2Publication Date: 2022-04-12
- Inventor: Takanobu Kajihara , Katsuhiko Omae , Takashi Nagao , Masayuki Funakoshi , Norio Emi , Atsuki Fujita , Yuki Okabe
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- International Application: PCT/JP2017/034019 WO 20170921
- International Announcement: WO2019/058473 WO 20190328
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/367 ; H02K11/33 ; H01L23/31 ; H01L23/495 ; H02M7/00 ; H02M7/537

Abstract:
A semiconductor device is provided with a heat dissipating face side skirt portion, which is a frame-form projection, on a heat dissipating face of a lead frame. Because of this, creepage distance increases with a small increase in an amount of resin, and insulating properties improve. Also, the heat dissipating face side skirt portion is molded via two transfer molding steps, wettability of the second molding resin with respect to a first molding resin and the lead frame increases, and adhesion improves. Furthermore, an end face of an inner lead is exposed in an element sealing portion on a mounting face side, and covered with a second thin molded portion molded using the second molding resin, whereby heat generated in a semiconductor element can efficiently be caused to escape from faces of both a first thin molded portion and the second thin molded portion, because of which heat dissipation improves.
Public/Granted literature
- US20210125891A1 SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE INCLUDING THE SEMICONDUCTOR DEVICE Public/Granted day:2021-04-29
Information query
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