Invention Grant
- Patent Title: Semiconductor structure comprising via element and manufacturing method for the same
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Application No.: US16826330Application Date: 2020-03-23
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Publication No.: US11302605B2Publication Date: 2022-04-12
- Inventor: Dai-Ying Lee , Ming-Hsiu Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L21/48 ; H01L21/768

Abstract:
A semiconductor structure and a manufacturing method for the same. The semiconductor structure includes a plug element and a via element. The plug element includes a tungsten plug. The plug element has a plug size in a lateral direction. The via element is electrically connected on the plug element. The via element is non-symmetrical with respect a center line of the plug element extending along a longitudinal direction. The via element has a via size in the lateral direction. The plug size is bigger than the via size.
Public/Granted literature
- US20210296208A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2021-09-23
Information query
IPC分类: