Invention Grant
- Patent Title: Integrated circuit cells and related methods
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Application No.: US16943896Application Date: 2020-07-30
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Publication No.: US11302631B2Publication Date: 2022-04-12
- Inventor: Te-Hsin Chiu , Shih-Wei Peng , Jiann-Tyng Tzeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/02 ; H01L27/118 ; H01L21/768

Abstract:
An integrated circuit cell is provided, which may include a substrate with a front side and a back side, an active region, a first via, and first, second and third conductive layers. A portion of the active region may be formed within the substrate. The first via and the first, second and third conductive layers are on the back side. The second and third conductive layers may be located further away from the substrate in a first direction than the first and second conductive layers, respectively. The depth of the first via may be greater than a distance between the second conductive layer and the third conductive layer. The integrated circuit cell may include a cell height in a second direction substantially perpendicular to the first direction. A width of the first via along the second direction may be between about 0.05 to about 0.25 times the cell height.
Public/Granted literature
- US20220037252A1 INTEGRATED CIRCUIT CELLS AND RELATED METHODS Public/Granted day:2022-02-03
Information query
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