A semiconductor device includes a first high resistance pattern and a second high resistance pattern that are disposed along an X axis and are separated from each other, a coupling pattern that couples the first high resistance pattern and the second high resistance pattern, and a signal wiring disposed at a layer above the first high resistance pattern, the second high resistance pattern, and the coupling pattern. The coupling pattern includes a first portion that overlaps an end portion of the first high resistance pattern in a plan view at the layer above the first high resistance pattern, the coupling pattern includes a second portion that overlaps an end portion of the second high resistance pattern in a plan view at a layer above the second high resistance pattern, and the signal wiring is disposed along a Y axis that intersects the X axis in a plan view between an end of the coupling pattern at the first portion side and an end of the coupling pattern at the second portion side.