Invention Grant
- Patent Title: Semiconductor device with shielding structure for cross-talk reduction
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Application No.: US16908284Application Date: 2020-06-22
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Publication No.: US11302649B2Publication Date: 2022-04-12
- Inventor: Shih-Ya Huang , Chung-Hao Tsai , Chuei-Tang Wang , Chen-Hua Yu , Chih-Yuan Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/528 ; H01L23/00 ; H01L23/522 ; H01L23/538 ; H01L23/50 ; H01L21/683 ; H01L21/56 ; H01L23/31

Abstract:
A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.
Public/Granted literature
- US20200321288A1 Semiconductor Device with Shielding Structure for Cross-talk Reduction Public/Granted day:2020-10-08
Information query
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