- Patent Title: Semiconductor package with air gap and manufacturing method thereof
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Application No.: US16864767Application Date: 2020-05-01
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Publication No.: US11302662B2Publication Date: 2022-04-12
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/00 ; H01L23/31 ; H01L25/065

Abstract:
The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.
Public/Granted literature
- US20210343668A1 SEMICONDUCTOR PACKAGE WITH AIR GAP AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-11-04
Information query
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