Invention Grant
- Patent Title: Solid-state imaging element and solid-state imaging apparatus
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Application No.: US17126751Application Date: 2020-12-18
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Publication No.: US11302728B2Publication Date: 2022-04-12
- Inventor: Hiroaki Matsuo
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JP2016-177311 20160912
- Main IPC: H04N5/357
- IPC: H04N5/357 ; H04N5/374 ; H04N5/378 ; H04N5/363 ; H01L27/146 ; H01L27/28 ; H01L27/30

Abstract:
A solid-state imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.
Public/Granted literature
- US20210143195A1 SOLID-STATE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS Public/Granted day:2021-05-13
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