Invention Grant
- Patent Title: Semiconductor device and method fabricating the same
-
Application No.: US16687527Application Date: 2019-11-18
-
Publication No.: US11302774B2Publication Date: 2022-04-12
- Inventor: Hyunyoung Kim , Dowon Kwak , Kang-Won Seo
- Applicant: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Applicant Address: CN Qingdao
- Assignee: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Current Assignee: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Current Assignee Address: CN Qingdao
- Agency: ScienBiziP, P.C.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/105 ; H01L21/67 ; H01L21/285 ; H01L21/768 ; H01L21/311 ; H01L21/3105 ; H01L49/02
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate, a conductive pattern, a first conductive layer, and a dielectric layer. The conductive pattern extends upwardly from the substrate. The conductive pattern has a hollow structure. The first conductive layer covers the conductive pattern. The dielectric layer at least covers the first conductive layer.
Public/Granted literature
- US20210151553A1 SEMICONDUCTOR DEVICE AND METHOD FABRICATING THE SAME Public/Granted day:2021-05-20
Information query
IPC分类:
