Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16685040Application Date: 2019-11-15
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Publication No.: US11302788B2Publication Date: 2022-04-12
- Inventor: Pan Pan , Naiqian Zhang , Xi Song , Jianhua Xu
- Applicant: Dynax Semiconductor Inc.
- Applicant Address: CN Kunshan
- Assignee: Dynax Semiconductor Inc.
- Current Assignee: Dynax Semiconductor Inc.
- Current Assignee Address: CN Kunshan
- Agency: Flener IP & Business Law
- Agent Zareefa B. Flener
- Priority: CN201710975386.1 20171016
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/417 ; H01L21/285 ; H01L21/306 ; H01L29/06 ; H01L29/423
Abstract:
A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.
Public/Granted literature
- US20200091301A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-03-19
Information query
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