A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.