The object of the present disclosure is to suppress the conduction noise in a semiconductor device. A semiconductor device includes an inverter section being a full-bridge inverter, and a reflux section that short-circuits between output terminals U and V of the inverter section, in which impedances and are provided between each of freewheel diodes and of the upper arm and the output terminals U and V, and impedances and are provided between the freewheel diodes and of the lower arm and the input terminal N of in the inverter section, and the impedances to are greater than parasitic impedance of wiring assuming that IGBTs to and the output terminals U and V or the IGBTs and the input terminal N are connected only by the wiring.