Invention Grant
- Patent Title: MEMS device and manufacturing method thereof
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Application No.: US16633244Application Date: 2019-03-25
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Publication No.: US11305985B2Publication Date: 2022-04-19
- Inventor: Wei Sun , Yongxiang Wen , Chen Liu , Junshan Ge , Zhijian Ma
- Applicant: Hangzhou Silan Integrated Circuit Co., Ltd. , Hangzhou Silan Microelectronics CO., LTD.
- Applicant Address: CN Hangzhou; CN Hangzhou
- Assignee: Hangzhou Silan Integrated Circuit Co., Ltd.,Hangzhou Silan Microelectronics CO., LTD.
- Current Assignee: Hangzhou Silan Integrated Circuit Co., Ltd.,Hangzhou Silan Microelectronics CO., LTD.
- Current Assignee Address: CN Hangzhou; CN Hangzhou
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201811641765.8 20181229
- International Application: PCT/CN2019/079574 WO 20190325
- International Announcement: WO2020/133756 WO 20200702
- Main IPC: H01L41/04
- IPC: H01L41/04 ; B81B7/02 ; H01L41/047

Abstract:
A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.
Information query
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