There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.