Invention Grant
- Patent Title: Silicon etching solution, silicon etching method, and method of producing silicon fin structure
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Application No.: US16905163Application Date: 2020-06-18
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Publication No.: US11306248B2Publication Date: 2022-04-19
- Inventor: Ming-Yen Chung , Masaru Takahama
- Applicant: TOKYO OHKA KOGYO CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JPJP2019-121824 20190628
- Main IPC: C09K13/00
- IPC: C09K13/00 ; H01L21/306 ; H01L21/02
Abstract:
A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater.
Information query
