Invention Grant
- Patent Title: Substrate processing method, substrate processing device and etching liquid
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Application No.: US16965776Application Date: 2019-01-23
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Publication No.: US11306249B2Publication Date: 2022-04-19
- Inventor: Koukichi Hiroshiro , Tetsuya Sakazaki , Koji Kagawa , Kenji Sekiguchi , Kazuyoshi Mizumoto
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2018-013985 20180130,JPJP2018-122609 20180628
- International Application: PCT/JP2019/002141 WO 20190123
- International Announcement: WO2019/151090 WO 20190808
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/311 ; C09K13/08 ; H01L21/67 ; H01L21/687
Abstract:
A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.
Public/Granted literature
- US20210032537A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE AND ETCHING LIQUID Public/Granted day:2021-02-04
Information query
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