Invention Grant
- Patent Title: Array substrate
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Application No.: US16496421Application Date: 2019-04-18
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Publication No.: US11307466B2Publication Date: 2022-04-19
- Inventor: Qian Li
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Nathan & Associates
- Agent Menachem Nathan
- Priority: CN201910086223.7 20190129
- International Application: PCT/CN2019/083133 WO 20190418
- International Announcement: WO2020/155411 WO 20200806
- Main IPC: H01L27/14
- IPC: H01L27/14 ; G02F1/136 ; H01L27/12 ; G02F1/1337

Abstract:
The array substrate of embodiments of the present invention uses the adjustment dielectric layer to reduce parasitic capacitance between the gate metal layer and the electrode layer, thus avoiding the dark streak phenomenon due to the fringing electric field and the surrounding environment and improving display quality.
Public/Granted literature
- US20210405424A1 ARRAY SUBSTRATE Public/Granted day:2021-12-30
Information query
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