Invention Grant
- Patent Title: Memory device with configurable performance and defectivity management
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Application No.: US16560560Application Date: 2019-09-04
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Publication No.: US11307951B2Publication Date: 2022-04-19
- Inventor: Jianmin Huang , Xiangang Luo , Kulachet Tanpairoj
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/30 ; G11C29/02 ; G06F12/14 ; G11C16/14 ; G06F11/07 ; G06F11/34

Abstract:
A memory device comprises a memory control unit including a processor configured to control operation of the memory array according to a first memory management protocol for memory access operations, the first memory management protocol including boundary conditions for multiple operating conditions comprising program/erase (P/E) cycles, error management operations, drive writes per day (DWPD), and power consumption; monitor operating conditions of the memory array for the P/E cycles, error management operations, DWPD, and power consumption; determine when a boundary condition for one of the multiple operating conditions is met; and in response to determining that a first boundary condition for a first monitored operating condition is met, change one or more operating conditions of the first memory management protocol to establish a second memory management protocol for the memory access operations, the second memory management protocol including a change boundary condition of a second monitored operating condition.
Public/Granted literature
- US20210064495A1 MEMORY DEVICE WITH CONFIGURABLE PERFORMANCE AND DEFECTIVITY MANAGEMENT Public/Granted day:2021-03-04
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