Invention Grant
- Patent Title: Method and system for refresh of memory devices
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Application No.: US16996788Application Date: 2020-08-18
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Publication No.: US11309011B2Publication Date: 2022-04-19
- Inventor: Hiroki Noguchi , Yih Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/406 ; G11C11/4091 ; G11C11/4076

Abstract:
A memory system is disclosed. The memory system includes a memory array and a controller. The controller is configured to perform a refresh operation to the memory array with a first refresh cycle rate. The first refresh cycle rate is derived from a first refresh time in a lookup table. The lookup table is configured to store refresh times and refresh temperatures corresponding to the refresh times separately.
Public/Granted literature
- US20210264970A1 METHOD AND SYSTEM FOR REFRESH OF MEMORY DEVICES Public/Granted day:2021-08-26
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