Invention Grant
- Patent Title: Semiconductor memory device which stores plural data in a cell
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Application No.: US17101431Application Date: 2020-11-23
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Publication No.: US11309019B2Publication Date: 2022-04-19
- Inventor: Noboru Shibata , Tomoharu Tanaka
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-024475 20040130,JP2004-160165 20040528
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/04 ; G11C16/12 ; G11C16/34 ; G11C16/10

Abstract:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k
Public/Granted literature
- US20210104274A1 SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL Public/Granted day:2021-04-08
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