Invention Grant
- Patent Title: Systems and methods for stabilizing cell threshold voltage
-
Application No.: US16760420Application Date: 2019-12-03
-
Publication No.: US11309021B2Publication Date: 2022-04-19
- Inventor: Paolo Amato , Marco Sforzin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- International Application: PCT/IB2019/001201 WO 20191203
- International Announcement: WO2021/111155 WO 20210610
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
The present disclosure relates to a memory device comprising a plurality of memory cells, each memory cell being programmable to a logic state corresponding to a threshold voltage exhibited by the memory cell in response to an applied voltage, and a logic circuit portion operatively coupled to the plurality of memory cells, wherein the logic circuit portion is configured to scan memory addresses of the memory device, and to generate seasoning pulses to be applied to the addressed pages of the memory device. A related electronic system and related methods are also disclosed.
Public/Granted literature
- US20210407591A1 Systems and Methods for Stabilizing Cell Threshold Voltage Public/Granted day:2021-12-30
Information query