An integrated memory device can include an array of memory cells with decoding and sensing circuitry, a memory controller, read and write circuitry associated to the sensing circuitry, logic circuit portions in the read and write circuitry including at least a logic element receiving a data stream on a data input and a clock signal on a clock input, and a programmable or trimmable delay element or circuit upstream to the data input or the clock input for self trimming the internal timing of said at least a logic element by aligning in time the clock signal and/or the data stream. Operating parameters of the integrated circuit can be set for self trimming an internal timing of the integrated circuit.