Invention Grant
- Patent Title: Semiconductor device with metal spacers and method for fabricating the same
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Application No.: US16665350Application Date: 2019-10-28
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Publication No.: US11309245B2Publication Date: 2022-04-19
- Inventor: Kuo-Hui Su
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L23/535
Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a plurality of contacts, a plurality of plugs positioned above the plurality of contacts, a plurality of metal spacers positioned above the plurality of plugs; and a plurality of air gaps respectively positioned between the plurality of metal spacers.
Public/Granted literature
- US20210125915A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-04-29
Information query
IPC分类:
