A semiconductor device, including: a substrate, a transistor layer, a dielectric layer, and a power grid structure. The transistor layer is formed on a first side of the substrate and includes a plurality of active regions for forming transistors. The dielectric layer is formed on the transistor layer and includes a conductive strip disposed on a first active region and extending toward a second active region for signal connection. The power grid structure is formed on a second side of the substrate opposite to the first side and arranged to direct a power source to the transistor layer.