Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US17063452Application Date: 2020-10-05
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Publication No.: US11309248B2Publication Date: 2022-04-19
- Inventor: Atsushi Okamoto , Hirotaka Takeno
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-073285 20180405
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/092 ; H01L29/78 ; H03K17/687

Abstract:
A power switch cell using vertical nanowire (VNW) FETs includes a switch element configured to be capable of switching between electrical connection and disconnection between a global power interconnect and a local power interconnect. The switch element is constituted by at least one VNW FET. The top electrode of the VNW FET constituting the switch element is connected with the global power interconnect.
Public/Granted literature
- US20210020571A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2021-01-21
Information query
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