Invention Grant
- Patent Title: Stack-gate circuit
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Application No.: US16573664Application Date: 2019-09-17
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Publication No.: US11309306B2Publication Date: 2022-04-19
- Inventor: Yu-Tao Yang , Wen-Shen Chou , Yung-Chow Peng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/088 ; G06F30/392 ; G06F30/394 ; H01L27/092
Abstract:
An integrated circuit includes an active zone having a center portion adjoining a first side portion and a second side portion. A first transistor having a gate formed over one of the first channel regions in the center portion has a first threshold-voltage. A second transistor having a gate formed over one of the second channel regions in the center portion has a second threshold-voltage. A third transistor having a gate formed over one of the third channel regions in the first side portion has a third threshold-voltage. A fourth transistor having a gate formed over one of the fourth channel regions in the second side portion has a fourth threshold-voltage. A first average of the first threshold-voltage and the second threshold-voltage is larger than a second average of the third threshold-voltage and the fourth threshold-voltage by a predetermined threshold-voltage offset.
Information query
IPC分类:
