Invention Grant
- Patent Title: Imaging element, method of manufacturing imaging element, and electronic apparatus
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Application No.: US16647687Application Date: 2018-09-14
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Publication No.: US11309343B2Publication Date: 2022-04-19
- Inventor: Taichi Natori
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JPJP2017-190422 20170929
- International Application: PCT/JP2018/034127 WO 20180914
- International Announcement: WO2019/065295 WO 20190404
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G02B5/20

Abstract:
The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.
Public/Granted literature
- US20200235141A1 IMAGING ELEMENT, METHOD OF MANUFACTURING IMAGING ELEMENT, AND ELECTRONIC APPARATUS Public/Granted day:2020-07-23
Information query
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