Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16683486Application Date: 2019-11-14
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Publication No.: US11309396B2Publication Date: 2022-04-19
- Inventor: Wei-Hao Wu , Zhi-Chang Lin , Ting-Hung Hsu , Kuan-Lun Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L29/786 ; H01L27/092 ; B82Y10/00 ; H01L21/762 ; H01L21/8238 ; H01L21/8234 ; H01L29/06 ; H01L29/775 ; H01L21/822 ; H01L27/06 ; H01L27/12 ; H01L29/08 ; H01L27/088
Abstract:
A semiconductor device includes a first device formed over a substrate. The first device includes a first gate stack encircling a first nanostructure, and the first device is a logic circuit device. The semiconductor device includes a second device formed over the first device. The second device includes a second gate stack encircling a second nanostructure, and the second device is a static random access memory (SRAM).
Public/Granted literature
- US20200083340A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-03-12
Information query
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