Invention Grant
- Patent Title: Process for preparing a thin layer of ferroelectric material
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Application No.: US16980310Application Date: 2019-02-18
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Publication No.: US11309399B2Publication Date: 2022-04-19
- Inventor: Alexis Drouin
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1852122 20180312
- International Application: PCT/FR2019/050356 WO 20190218
- International Announcement: WO2019/175487 WO 20190919
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L29/51 ; H01L21/762

Abstract:
A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.
Public/Granted literature
- US20210036124A1 PROCESS FOR PRODUCING PREPARING A THIN LAYER OF FERROELECTRIC MATERIAL Public/Granted day:2021-02-04
Information query
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