Invention Grant
- Patent Title: Semiconductor device with improved short circuit withstand time and methods for manufacturing the same
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Application No.: US16598646Application Date: 2019-10-10
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Publication No.: US11309413B2Publication Date: 2022-04-19
- Inventor: Sei-Hyung Ryu
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L29/08 ; H01L21/266 ; H01L21/8234 ; H01L29/36 ; H01L29/739
Abstract:
A semiconductor device includes a substrate, a drift layer, a well region, and a source region. The substrate has a first conductivity type. The drift layer has the first conductivity type and is on the substrate. The well region has a second conductivity type opposite the first conductivity type and provides a channel region. The source region is in the well region and has the first conductivity type. A doping concentration of the well region along a surface of the drift layer opposite the substrate is variable such that the well region includes a region of increased doping concentration at a distance from a junction between the source region and the well region.
Public/Granted literature
- US20210111279A1 SEMICONDUCTOR DEVICE WITH IMPROVED SHORT CIRCUIT WITHSTAND TIME AND METHODS FOR MANUFACTURING THE SAME Public/Granted day:2021-04-15
Information query
IPC分类:
