Invention Grant
- Patent Title: Wide gap semiconductor device
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Application No.: US16976731Application Date: 2018-03-29
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Publication No.: US11309415B2Publication Date: 2022-04-19
- Inventor: Shunichi Nakamura
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Ladas & Parry, LLP
- International Application: PCT/JP2018/013081 WO 20180329
- International Announcement: WO2019/186853 WO 20191003
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/522 ; H01L27/088 ; H01L27/08
Abstract:
A wide gap semiconductor device has: a first MOSFET region (M0) having a first gate electrode 10 and a first source region 30 provided in a first well region 20 made of a second conductivity type; a second MOSFET region (M1) provided below a gate pad 100 and having a second gate electrode 110 and a second source region 130 provided in a second well region 120 made of the second conductivity type; and a built-in diode region electrically connected to the second gate electrode 110. The second source region 130 of the second MOSFET region (M1) is electrically connected to the gate pad 100.
Information query
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