Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16746595Application Date: 2020-01-17
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Publication No.: US11309419B2Publication Date: 2022-04-19
- Inventor: Chao-Wei Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L27/092
Abstract:
A semiconductor device includes a semiconductor fin and a gate structure above the semiconductor fin. The semiconductor fin includes a bottom portion and a top portion above the bottom portion. The bottom portion and the top portion are made of different materials. The top portion includes a head part and a neck part between the head part and the bottom portion. The neck part has a width less than a width of the head part, and the neck part is in contact with the bottom portion.
Public/Granted literature
- US20210226051A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-07-22
Information query
IPC分类:
