Invention Grant
- Patent Title: Field effect transistor having source control electrode, manufacturing method thereof and electronic device
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Application No.: US16772751Application Date: 2018-10-17
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Publication No.: US11309425B2Publication Date: 2022-04-19
- Inventor: Shibo Liang
- Applicant: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD , BEIJING HUATAN TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing; CN Beijing
- Assignee: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD,BEIJING HUATAN TECHNOLOGY CO., LTD.
- Current Assignee: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD,BEIJING HUATAN TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing; CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201711339629.9 20171214
- International Application: PCT/CN2018/110633 WO 20181017
- International Announcement: WO2019/114409 WO 20190620
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L29/45 ; H01L29/66 ; B82Y10/00
Abstract:
A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source(105) formed of a Dirac material(103) and a drain(107); a channel(102) disposed between the source(105) and the drain(107); and a source control electrode(108) disposed on the source(105) and for controlling the doping of the Dirac material(103) such that the Dirac material(103) and the channel(102) are doped in an opposite manner; and a gate(106) disposed on the channel(102) and electrically insulated from the channel(102).
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