A semiconductor device includes a layer stack with a plurality of first semiconductor layers of a first doping type and a plurality of second semiconductor layers of a second doping type complementary to the first doping type. A first semiconductor region of a first semiconductor device adjoins the first semiconductor layers. Each second semiconductor region of the first semiconductor device adjoins at least one of the second semiconductor layers, and is spaced apart from the first semiconductor region. A third semiconductor layer adjoins the layer stack and each first semiconductor region and each second semiconductor region. The third semiconductor layer includes a first region arranged between the first semiconductor region and the second semiconductor region in a first direction. A third semiconductor region of the first or the second doping type extends from a first surface of the third semiconductor layer into the first region.