Invention Grant
- Patent Title: Level shifting circuit
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Application No.: US16953692Application Date: 2020-11-20
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Publication No.: US11309891B2Publication Date: 2022-04-19
- Inventor: Guo Zhen Ye
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Crowell & Moring LLP
- Priority: CN202010176645.6 20200313
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; H03K3/356

Abstract:
The present application is directed to a level shifting circuit. In one form, a level shifting circuit includes a first inverter, a level shifting unit, and a fast driving unit. The first inverter is configured to invert an input signal received at an input node and to output an inverted input signal to a second input node. The level shifting unit is configured to perform amplitude up-shifting processing on a received input signal. The fast driving unit is configured to pull up an output signal of an output node of the level shifting unit by increasing a discharge current of the level shifting unit when receiving the input signal.
Public/Granted literature
- US20210288649A1 LEVEL SHIFTING CIRCUIT Public/Granted day:2021-09-16
Information query
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