Invention Grant
- Patent Title: Mems device built using the BEOL metal layers of a solid state semiconductor process
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Application No.: US17145014Application Date: 2021-01-08
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Publication No.: US11312617B2Publication Date: 2022-04-26
- Inventor: Josep Montanyà Silvestre
- Applicant: Nanusens SL
- Applicant Address: ES Cerdanyola del Vallès
- Assignee: Nanusens SL
- Current Assignee: Nanusens SL
- Current Assignee Address: ES Cerdanyola del Vallès
- Agency: Burns & Levinson LLP
- Agent Christopher Carroll
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00 ; B81B7/00
Abstract:
A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.
Public/Granted literature
- US11267692B2 Mems device built using the BEOL metal layers of a solid state semiconductor process Public/Granted day:2022-03-08
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