Invention Grant
- Patent Title: CMP slurry solution for hardened fluid material
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Application No.: US17020411Application Date: 2020-09-14
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Publication No.: US11312882B2Publication Date: 2022-04-26
- Inventor: Kuo-Yin Lin , Wen-Kuei Liu , Teng-Chun Tsai , Shen-Nan Lee , Kuo-Cheng Lien , Chang-Sheng Lin , Yu-Wei Chou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: C09G1/14
- IPC: C09G1/14 ; C09G1/18 ; C09G1/02 ; C09G1/04 ; H01L21/027 ; H01L21/3105 ; H01L21/311
Abstract:
A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).
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