Invention Grant
- Patent Title: Method for forming aluminum film
-
Application No.: US16376937Application Date: 2019-04-05
-
Publication No.: US11313031B2Publication Date: 2022-04-26
- Inventor: Yuji Tokura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-117580 20180621
- Main IPC: C23C14/16
- IPC: C23C14/16 ; C23C14/34 ; H01L21/02

Abstract:
Provided is a technique of forming an aluminum film that has high flatness and less cavities. Step S11 is forming a first film having a thickness that is equal to or greater than 0.1 μm and less than 1 μm, by sputtering a material onto a substrate. Step S12 is reflowing the first film by heating the first film. Step S13 is forming a second film by sputtering the material onto the first film that has been reflowed. Step S14 is reflowing the second film by heating the second film. Step S15 is forming a third film by sputtering the material onto the second film that has been reflowed. Step S16 is reflowing the third film by heating the third film.
Public/Granted literature
- US20190390319A1 METHOD FOR FORMING ALUMINUM FILM Public/Granted day:2019-12-26
Information query
IPC分类: