Invention Grant
- Patent Title: Indium phosphide single-crystal body and indium phosphide single-crystal substrate
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Application No.: US16335405Application Date: 2018-07-03
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Publication No.: US11313050B2Publication Date: 2022-04-26
- Inventor: Takuya Yanagisawa , Kazuaki Konoike , Katsushi Hashio
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: WOPCT/JP2017/024460 20170704
- International Application: PCT/JP2018/025272 WO 20180703
- International Announcement: WO2019/009306 WO 20190110
- Main IPC: C30B29/40
- IPC: C30B29/40 ; C30B11/02

Abstract:
An indium phosphide single-crystal body has an oxygen concentration of less than 1×1016 atoms·cm−3, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×1016 atoms·cm−13, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.
Public/Granted literature
- US20200017992A1 INDIUM PHOSPHIDE SINGLE-CRYSTAL BODY AND INDIUM PHOSPHIDE SINGLE-CRYSTAL SUBSTRATE Public/Granted day:2020-01-16
Information query
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