Invention Grant
- Patent Title: Inspection method for multilayer semiconductor device
-
Application No.: US17037981Application Date: 2020-09-30
-
Publication No.: US11313670B2Publication Date: 2022-04-26
- Inventor: Mikhail Pylnev , Tzu-Chien Wei , Duc-Anh Le
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Li & Cai Intellectual Property (USA) Office
- Main IPC: G01B11/06
- IPC: G01B11/06 ; H01L21/66 ; H01G9/20
Abstract:
An inspection method for a multilayer semiconductor device is provided. The inspection method can investigate multilayered ensembles of a multilayer semiconductor device and obtain stratigraphic thickness (ST) maps of each layer in the multilayer semiconductor device by utilizing absorption edges of materials of interests and obtaining calibration quality curves.
Public/Granted literature
- US20220099432A1 INSPECTION METHOD FOR MULTILAYER SEMICONDUCTOR DEVICE Public/Granted day:2022-03-31
Information query
