A method for updating a memory, which comprises several blocks, wherein each of the several blocks comprises multi-level cells and is operable in an MLC-mode or in a SLC-mode, wherein each multi-level cell may store more than one bit, wherein the method includes for each block to be updated: (a) copying the content of the block to a buffer block; (b) erasing the block; (c) writing the content of the block from the buffer block and an updated content for this block to this block, utilizing the capability of the block to be operated in the MLC-mode; (d) copying the updated content of the block to the buffer block; (e) erasing the block; and (f) writing the updated content from the buffer block to the block, utilizing the capability of the block to be operated in the SLC-mode. Also, therefore is a corresponding device.