Invention Grant
- Patent Title: Integrated circuit device with bonding structure and method of forming the same
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Application No.: US16440292Application Date: 2019-06-13
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Publication No.: US11315871B2Publication Date: 2022-04-26
- Inventor: Tzu-Ching Tsai
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/48 ; H01L23/532 ; H01L23/00 ; H01L23/528 ; H01L25/065 ; H01L25/00 ; H01L21/768
Abstract:
An integrated circuit device includes a first substrate, a second substrate, a first expanding pad, a second expanding pad and a bonding structure. The first substrate is provided with a first conductive portion, the second substrate is provided with a second conductive portion, the first expanding pad is formed on the first conductive portion to provide a first expanded contact area, the second expanding pad is formed on the second conductive portion to provide a second expanded contact area, and the bonding structure is formed between the first substrate and the second substrate, wherein the first expanding pad is bonded to the second expanding pad.
Information query
IPC分类:
